Thin film germanium diode with low reverse breakdown

Details Thin film germanium diode with low reverse breakdown Thin film germanium diode with low reverse breakdown

2005-11-30

2008-12-23

Picardat, Kevin M (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S328000, C438S600000, C257S202000, C257S208000

Reexamination Certificate

active

07468296

ABSTRACT:
In fabricating an electronic structure, a substrate is provided, and a first barrier layer is provided on the substrate. A germanium thin film diode is provided on the first barrier layer, and a second barrier layer is provided on the germanium thin film diode. A memory device is provided over and connected to the second barrier layer.

REFERENCES:
patent: 4203123 (1980-05-01), Shanks
patent: 2005/0121742 (2005-06-01), Petti et al.
patent: 2006/0249753 (2006-11-01), Herner et al.

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