Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

2005-11-14

2008-11-11

Tsai, H. Jey (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S217000, C257SE29193

Reexamination Certificate

active

07449379

ABSTRACT:
On an insulation layer12formed on a silicon substrate10, there are formed in an NMOS transistor region16an NMOS transistor14comprising a silicon layer34, a lattice-relaxed silicon germanium layer22formed on the silicon layer34, a tensile-strained silicon layer24formed on the silicon germanium layer22and a gate electrode28formed on the silicon layer24with a gate insulation film26formed therebetween and in a PMOS transistor region20a PMOS transistor18comprising a silicon layer34, a compression-strained silicon germanium layer formed on the silicon layer34and a gate electrode28formed on the silicon germanium layer36with a gate insulation film26formed therebetween.

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Chinese Office Action dated May 9, 2008, corresponding to Chinese Application No. 038265982.

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