Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2003-05-07
2008-11-18
Dickey, Thomas L (Department: 2826)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S479000, C438S496000, C257SE21129, C257SE21133, C257SE21562
Reexamination Certificate
active
07452757
ABSTRACT:
Silicon-on-insulator (SOI) structures are provided by forming a single-crystal insulator over a substrate, followed by heteroepitaxy of a semiconductor layer thereover. Atomic layer deposition (ALD) is preferably used to form an amorphous insulator, followed by solid phase epitaxy to convert the layer into a single-crystal structure. Advantageously, the crystalline insulator has a lattice structure and lattice constant closely matching that of the semiconductor formed over it, and a ternary insulating material facilitates matching properties of the layers. Strained silicon can be formed without need for a buffer layer. An amorphous SiO2layer can optionally be grown underneath the insulator. In addition, a buffer layer can be grown, either between the substrate and the insulator or between the insulator and the semiconductor layer, to produce desired strain in the active semiconductor layer.
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Arena Chantal
Raaijmakers Ivo
Werkhoven Christiaan J.
ASM America Inc.
Dickey Thomas L
Erdem Fazli
Knobbe Martens Olson & Bear LLP
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