Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

2006-09-14

2008-12-16

Pert, Evan (Department: 2826)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

Reexamination Certificate

active

07465637

ABSTRACT:
A method for manufacturing a semiconductor device comprises the steps of forming a gate trench in a semiconductor substrate, forming a gate insulation film in an inner wall of the gate trench, filling a gate electrode material into at least an inside of the gate trench, forming a gate electrode by patterning the gate electrode material, and selectively forming a punch-through stopper region prior to patterning the gate electrode material, using a mask in a prescribed position of the semiconductor substrate that is adjacent to the gate trench. The step for forming the punch-through stopper region may be performed subsequent to the step for filling the gate electrode material into the gate trench, or may be performed prior to the step for forming the gate trench.

REFERENCES:
patent: 5365097 (1994-11-01), Kenney
patent: 7060574 (2006-06-01), Kim et al.
patent: 5-102479 (1993-04-01), None
patent: 8-23092 (1996-01-01), None
patent: 2000-114517 (2000-04-01), None
patent: 2002-329795 (2002-11-01), None

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