Method for making a semiconductor device comprising a...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C438S289000, C438S287000, C438S478000, C438S602000

Reexamination Certificate

active

07446002

ABSTRACT:
A method for making a semiconductor device may include forming a superlattice comprising a plurality of stacked groups of layers adjacent a substrate. Each group of layers of the superlattice may include a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The method may further include forming a high-K dielectric layer on the electrode layer, and forming an electrode layer on the high-K dielectric layer and opposite the superlattice.

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