Methods of laterally forming single crystalline thin film...

Details Methods of laterally forming single crystalline thin film... Methods of laterally forming single crystalline thin film...

2006-03-17

2008-12-02

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S166000, C438S487000, C257SE21133, C257SE21409

Reexamination Certificate

active

07459353

ABSTRACT:
A method of forming an integrated circuit can be provided by successively laterally forming single crystalline thin film regions from an amorphous thin film using a lower single crystalline seed layer.

REFERENCES:
patent: 5972105 (1999-10-01), Yamazaki et al.
patent: 6645454 (2003-11-01), Voutsas
patent: 6767804 (2004-07-01), Crowder
patent: 6919238 (2005-07-01), Bohr
patent: 2004/0016969 (2004-01-01), Bohr
patent: 2004/0018672 (2004-01-01), Bohr
patent: 2005/0277235 (2005-12-01), Son et al.
patent: 2001-308008 (2001-11-01), None
patent: 2002-359159 (2002-12-01), None
patent: 1020020091896 (2002-12-01), None
patent: 1020040098108 (2004-11-01), None

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