Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2005-01-28

2008-11-04

Sarkar, Asok K. (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S238000, C438S241000

Reexamination Certificate

active

07445989

ABSTRACT:
A method of manufacturing a semiconductor device that comprises the steps of: removing a second insulating film on a contact region of a first conductor; forming a second conductive film on the second insulating film; removing the second conductive film on the contact region of the first conductor to make the second conductive film into a second conductor; forming an interlayer insulating film (a third insulating film) covering the second conductor; forming a first hole in the interlayer insulating film on the contact region; and forming a conductive plug, which is electrically connected with the contact region, in the first hole.

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Chinese Office Action dated Dec. 7, 2007, issued in corresponding Chinese Application No. 200510009513X.

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