Semiconductor device with ferroelectric capacitor and...

Details Semiconductor device with ferroelectric capacitor and... Semiconductor device with ferroelectric capacitor and...

2006-02-22

2008-12-02

Pizarro, Marcos D. (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S003000, C438S396000, C438S387000, C257SE21664

Reexamination Certificate

active

07459361

ABSTRACT:
A semiconductor device fabrication method includes the steps of forming a conductive plug in an insulating layer on a semiconductor substrate so as to be connected to an element on the substrate; forming a titanium aluminum nitride (TiAlN) oxygen barrier film over the conductive plug; forming a titanium (Ti) film over the oxygen barrier film; applying a thermal process to the titanium film in nitrogen atmosphere to allow the titanium film to turn into a titanium nitride (TiN) film; and forming a lower electrode film of a capacitor over the titanium nitride film.

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