Semiconductor memory device

Details Semiconductor memory device Semiconductor memory device

2006-03-28

2008-12-02

Nguyen, Cuong Q (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S297000, C257S298000, C257S299000, C257S310000, C257S311000, C257S312000, C257S313000, C257S314000, C257S315000, C257S316000

Reexamination Certificate

active

07459741

ABSTRACT:
A semiconductor memory device excellent in data holding characteristics even when a cell area is reduced is disclosed. According to one aspect of the present invention, a semiconductor memory device comprises a transistor including a source, a drain and a channel region disposed in a semiconductor substrate, and including a gate electrode disposed through a gate insulator on a surface of the semiconductor substrate of the channel region, a capacitor connected to the channel region, a first wiring line electrically connected to the gate electrode, and a second wiring line electrically connected to the drain.

REFERENCES:
patent: 5942778 (1999-08-01), Oikawa
patent: 6700150 (2004-03-01), Wu
patent: 6759702 (2004-07-01), Radens et al.
patent: 2004/0061161 (2004-04-01), Radens et al.
patent: 2005/0141262 (2005-06-01), Yamada et al.
patent: 2005/0196932 (2005-09-01), Divakaruni et al.
patent: 2002-26147 (2002-01-01), None
patent: 2004-335031 (2004-11-01), None

Affiliated with

Also associated with

Rating

Semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4029504