Flash memory device with word line discharge unit and data...

Static information storage and retrieval – Read/write circuit – Accelerating charge or discharge

Reexamination Certificate

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Details

C365S189011, C365S189040

Reexamination Certificate

active

07453750

ABSTRACT:
Exemplary embodiments of the present invention provide a flash memory device which includes a memory cell array. A decoder circuit is connected to the memory cell array via a plurality of select lines and a plurality of word lines. The detector circuit supplies voltages for a read operation to the plurality of select lines and the plurality of word lines during the read operation. A word line discharge unit is connected to the memory cell array via the plurality of word lines. The word line discharge unit discharges a voltage level of a selected word line during the read operation.

REFERENCES:
patent: 5617357 (1997-04-01), Haddad et al.
patent: 6717861 (2004-04-01), Jeong et al.
patent: 6804150 (2004-10-01), Park et al.
patent: 2003123491 (2003-04-01), None
patent: 2004213135 (2004-07-01), None
patent: 20020047770 (2002-06-01), None
patent: 20030021647 (2003-03-01), None
patent: 1020030054908 (2003-07-01), None
English Abstract for Publication No. 1020020047770.
English Abstract for Publication No. 1020030021647.
English Abstract for Publication No. 2003-123491.
English Abstract for Publication No. 2004-213135.

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