Static information storage and retrieval – Read/write circuit – Accelerating charge or discharge
Reexamination Certificate
2006-12-09
2008-11-18
Elms, Richard (Department: 2824)
Static information storage and retrieval
Read/write circuit
Accelerating charge or discharge
C365S189011, C365S189040
Reexamination Certificate
active
07453750
ABSTRACT:
Exemplary embodiments of the present invention provide a flash memory device which includes a memory cell array. A decoder circuit is connected to the memory cell array via a plurality of select lines and a plurality of word lines. The detector circuit supplies voltages for a read operation to the plurality of select lines and the plurality of word lines during the read operation. A word line discharge unit is connected to the memory cell array via the plurality of word lines. The word line discharge unit discharges a voltage level of a selected word line during the read operation.
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Elms Richard
F. Chau & Associates
Nguyen Nam
Samsung Electronics Co,. Ltd.
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