Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

2006-04-25

2008-12-16

Lee, Calvin (Department: 2892)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C438S777000

Reexamination Certificate

active

07465677

ABSTRACT:
A manufacturing method of a semiconductor device of the present invention includes the steps of forming a first insulating film over a substrate, forming a semiconductor film over the first insulating film, oxidizing or nitriding the semiconductor film by conducting a plasma treatment to the semiconductor film under a condition of an electron density of 1×1011cm−3or more and 1×1013cm−3or less and an electron temperature of 0.5 eV or more and 1.5 eV or less, using a high frequency wave, forming a second insulating film to cover the semiconductor film, forming a gate electrode over the second insulating film, forming a third insulating film to cover the gate electrode, and forming a conductive film over the third insulating film.

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