Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-04-29
2008-11-04
Malsawma, Lex (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S412000, C257SE29132
Reexamination Certificate
active
07446380
ABSTRACT:
The present invention provides a metal stack structure that stabilizes the flatband voltage and threshold voltages of material stacks that include a Si-containing conductor and a Hf-based dielectric. This present invention stabilizes the flatband voltages and the threshold voltages by introducing a rare earth metal-containing layer into the material stack that introduces, via electronegativity differences, a shift in the threshold voltage to the desired voltage. Specifically, the present invention provides a metal stack comprising a hafnium-based dielectric; a rare earth metal-containing layer located atop of, or within, said hafnium-based dielectric; an electrically conductive capping layer located above said hafnium-based dielectric; and a Si-containing conductor.
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Bojarczuk, Jr. Nestor A.
Chudzik Michael P.
Copel Matthew W.
Guha Supratik
Jammy Rajarao
International Business Machines - Corporation
Malsawma Lex
Scully, Scott, Murphy & Pressner, P.C.
Tuchman, Esq. Ido
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