Nonvolatile memory

Details Nonvolatile memory Nonvolatile memory

2005-06-13

2008-12-09

Smith, Zandra (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S296000, C257SE27084, C257S301000, C257S302000, C257S071000, C257SE21646, C257S905000, C257S906000, C257S908000, C257S314000, C438S257000

Reexamination Certificate

active

07462902

ABSTRACT:
A nonvolatile memory is provided. The memory includes a select transistor and a trench transistor. The select transistor is formed on the substrate. The select transistor includes a first gate formed on the substrate and first and second source/drain regions formed in the substrate next to the first gate. The trench transistor is formed in the substrate. The trench transistor includes a second gate formed in the trench of substrate, an electron trapping layer formed between the second gate and the trench and second and third source/drain regions formed in the substrate next to the second gate. The select transistor and the trench transistor share the second source/drain region.

REFERENCES:
patent: 5122846 (1992-06-01), Haken
patent: 5364812 (1994-11-01), Yashiro et al.
patent: 7002198 (2006-02-01), Salling et al.
patent: 7138681 (2006-11-01), Forbes et al.
patent: 2004/0130934 (2004-07-01), Prall et al.

Affiliated with

Also associated with

Rating

Nonvolatile memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Nonvolatile memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Nonvolatile memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4022556