Floating-gate non-volatile memory and method of fabricating...

Details Floating-gate non-volatile memory and method of fabricating... Floating-gate non-volatile memory and method of fabricating...

2005-08-11

2008-10-14

Smith, Matthew S. (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S314000, C257S329000

Reexamination Certificate

active

07435649

ABSTRACT:
A floating gate non-volatile memory is composed of a semiconductor substrate within which active regions and isolation dielectrics are alternately arranged in a first direction; a word line extending in the first direction to intersect with the active regions and the isolation dielectrics; a plurality of floating gates disposed between the respective active regions and the word lines; and a plurality of contacts connected with diffusion layers formed within the active regions, respectively, the plurality of contacts being arranged in the first direction. The plurality of contacts include drain contacts and a source contact, and the diffusion layers includes drain diffusion layers connected with the drain contacts and a source diffusion layer connected with the source contact. The semiconductor substrate incorporates a conductive source region extending in the first direction, and an embedded diffusion layer. The source region is positioned opposing the plurality of contacts across the word line.

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