Methods of forming and using memory cell structures

Details Methods of forming and using memory cell structures Methods of forming and using memory cell structures

2006-09-07

2008-08-12

Pham, Thanh Van (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S043000, C438S244000, C438S386000, C438S387000, C438S698000, C438S699000, C438S508000, C257SE21396

Reexamination Certificate

active

07410863

ABSTRACT:
A method of filling vias for a PCRAM cell with a metal is described. A PCRAM intermediate structure including a substrate, a first conductor, and an insulator through which a via extends has a metallic material formed within the via and on a surface of the insulator. The metallic material may be deposited on the surface and within the via. A hard mask of a flowable oxide is deposited over the metallic material in the via to protect the metallic material in the via. A subsequent dry sputter etch removes the metallic material from the surface of the insulator and a portion of the hard mask. After complete removal of the hard mask, a glass material is recessed over the metallic material in the via. Then, a layer of a metal-containing material is formed over the glass material. Finally, a second conductor is formed on the surface of the insulator.

REFERENCES:
patent: 3622319 (1971-11-01), Sharp
patent: 3743847 (1973-07-01), Boland
patent: 4269935 (1981-05-01), Masters et al.
patent: 4312938 (1982-01-01), Drexler et al.
patent: 4316946 (1982-02-01), Masters et al.
patent: 4320191 (1982-03-01), Yoshikawa et al.
patent: 4405710 (1983-09-01), Balasubramanyam et al.
patent: 4419421 (1983-12-01), Wichelhaus et al.
patent: 4499557 (1985-02-01), Holmberg et al.
patent: 4671618 (1987-06-01), Wu et al.
patent: 4795657 (1989-01-01), Formigoni et al.
patent: 4800526 (1989-01-01), Lewis
patent: 4847674 (1989-07-01), Sliwa et al.
patent: 5177567 (1993-01-01), Klersy et al.
patent: 5219788 (1993-06-01), Abernathey et al.
patent: 5238862 (1993-08-01), Blalock et al.
patent: 5272359 (1993-12-01), Nagasubramanian et al.
patent: 5314772 (1994-05-01), Kozicki
patent: 5315131 (1994-05-01), Kishimoto et al.
patent: 5350484 (1994-09-01), Gardner et al.
patent: 5360981 (1994-11-01), Owen et al.
patent: 5500532 (1996-03-01), Kozicki et al.
patent: 5512328 (1996-04-01), Yoshimura et al.
patent: 5512773 (1996-04-01), Wolf et al.
patent: 5726083 (1998-03-01), Takaishi
patent: 5751012 (1998-05-01), Wolstenholme et al.
patent: 5761115 (1998-06-01), Kozicki et al.
patent: 5789277 (1998-08-01), Zahorik et al.
patent: 5814527 (1998-09-01), Wolstenholme et al.
patent: 5818749 (1998-10-01), Harshfield
patent: 5841150 (1998-11-01), Gonzalez et al.
patent: 5846889 (1998-12-01), Harbison et al.
patent: 5851882 (1998-12-01), Harshfield
patent: 5869843 (1999-02-01), Harshfield
patent: 5896312 (1999-04-01), Kozicki et al.
patent: 5914893 (1999-06-01), Kozicki et al.
patent: 5920788 (1999-07-01), Reinberg
patent: 5998066 (1999-12-01), Block et al.
patent: 6031287 (2000-02-01), Harshfield
patent: 6072716 (2000-06-01), Jacobson et al.
patent: 6077729 (2000-06-01), Harshfield
patent: 6084796 (2000-07-01), Kozicki et al.
patent: 6117720 (2000-09-01), Harshfield
patent: 6143604 (2000-11-01), Chiang et al.
patent: 6177338 (2001-01-01), Liaw et al.
patent: 6236059 (2001-05-01), Wolstenholme et al.
patent: 6297170 (2001-10-01), Gabriel et al.
patent: 6300684 (2001-10-01), Gonzalez et al.
patent: 6316784 (2001-11-01), Zahorik et al.
patent: 6329606 (2001-12-01), Freyman et al.
patent: 6348365 (2002-02-01), Moore et al.
patent: 6350679 (2002-02-01), McDaniel et al.
patent: 6376284 (2002-04-01), Gonzalez et al.
patent: 6388324 (2002-05-01), Kozicki et al.
patent: 6391688 (2002-05-01), Gonzalez et al.
patent: 6414376 (2002-07-01), Thakur et al.
patent: 6418049 (2002-07-01), Kozicki et al.
patent: 6420725 (2002-07-01), Harshfield
patent: 6423628 (2002-07-01), Li et al.
patent: 6440837 (2002-08-01), Harshfield
patent: 6469364 (2002-10-01), Kozicki
patent: 6473332 (2002-10-01), Ignatiev et al.
patent: 6487106 (2002-11-01), Kozicki
patent: 2002/0000666 (2002-01-01), Kozicki et al.
patent: 2002/0072188 (2002-06-01), Gilton
patent: 2002/0106849 (2002-08-01), Moore
patent: 2002/0123169 (2002-09-01), Moore et al.
patent: 2002/0123170 (2002-09-01), Moore et al.
patent: 2002/0123248 (2002-09-01), Moore et al.
patent: 2002/0127886 (2002-09-01), Moore et al.
patent: 2002/0132417 (2002-09-01), Li
patent: 2002/0160551 (2002-10-01), Harshfield
patent: 2002/0163828 (2002-11-01), Krieger et al.
patent: 2002/0168820 (2002-11-01), Kozicki
patent: 2002/0168852 (2002-11-01), Harshfield et al.
patent: 2002/0190289 (2002-12-01), Harshfield et al.
patent: 2002/0190350 (2002-12-01), Kozicki
patent: 2003/0001229 (2003-01-01), Moore et al.
patent: 2003/0027416 (2003-02-01), Moore
patent: 2003/0032254 (2003-02-01), Gilton
patent: 2003/0035314 (2003-02-01), Kozicki
patent: 2003/0035315 (2003-02-01), Kozicki
patent: 2003/0038301 (2003-02-01), Moore
patent: 2003/0043631 (2003-03-01), Gilton et al.
patent: 2003/0045049 (2003-03-01), Campbell et al.
patent: 2003/0045054 (2003-03-01), Campbell et al.
patent: 2003/0047765 (2003-03-01), Campbell
patent: 2003/0047772 (2003-03-01), Li
patent: 2003/0047773 (2003-03-01), Li
patent: 2003/0048519 (2003-03-01), Kozicki
patent: 2003/0049912 (2003-03-01), Campbell et al.
patent: 2003/0068861 (2003-04-01), Li
patent: 2003/0068862 (2003-04-01), Li
patent: 2003/0095426 (2003-05-01), Hush et al.
patent: 2003/0096497 (2003-05-01), Moore et al.
patent: 2003/0107105 (2003-06-01), Kozicki
patent: 2003/0117831 (2003-06-01), Hush
patent: 2003/0128612 (2003-07-01), Moore et al.
patent: 2003/0137869 (2003-07-01), Kozicki
patent: 2003/0143782 (2003-07-01), Gilton et al.
patent: 2003/0155589 (2003-08-01), Campbell et al.
patent: 2003/0155606 (2003-08-01), Campbell et al.
patent: 2003/0156447 (2003-08-01), Kozicki
patent: 2003/0156463 (2003-08-01), Casper et al.
patent: 56126916 (1981-10-01), None
patent: WO 97/48032 (1997-12-01), None
patent: WO 99/28914 (1999-06-01), None
patent: WO 00/48196 (2000-08-01), None
patent: WO 02/21542 (2002-03-01), None
Abdel-All, A.; Elshafie,A.; Elhawary, M.M., DC electric-field effect in bulk and thin-film Ge5As38Te57 chalcogenide glass, Vacuum 59 (2000) 845-853.
Adler, D.; Moss, S.C., Amorphous memories and bistable switches, J. Vac. Sci. Technol. 9 (1972) 1182-1189.
Adler, D.; Henisch, H.K.; Mott, S.N., The mechanism of threshold switching in amorphous alloys, Rev. Mod. Phys. 50 (1978) 209-220.
Afifi, M.A.; Labib, H.H.; El-Fazary, M.H.; Fadel, M., Electrical and thermal properties of chalcogenide glass system Se75Ge25-xSbx, Appl. Phys. A 55 (1992) 167-169.
Afifi, M.A.; Labib, H.H.; Fouad, S.S.; El-Shazly, A.A., Electrical & thermal conductivity of the amorphous semiconductor GexSe1-x, Egypt, J. Phys. 17 (1986) 335-342.
Alekperova, Sh.M.; Gadzhieva, G.S., Current-Voltage characteristics of Ag2Se single crystal near the phase transition, Inorganic Materials 23 (1987) 137-139.
Aleksiejunas, A.; Cesnys, A., Switching phenomenon and memory effect in thin-film heterojunction of polycrystalline selenium-silver selenide, Phys. Stat. Sol. (a) 19 (1973) K169-K171.
Angell, C.A., Mobile ions in amorphous solids, Annu. Rev. Phys. Chem. 43 (1992) 693-717.
Aniya, M., Average electronegativity, medium-range-order, and ionic conductivity in superionic glasses, Solid state Ionics 136-137 (2000) 1085-1089.
Asahara, Y.; Izumitani, T., Voltage controlled switching in Cu-As-Se compositions, J. Non-Cryst. Solids 11 (1972) 97-104.
Asokan, S.; Prasad, M.V.N.; Parthasarathy, G.; Gopal, E.S.R., Mechanical and chemical thresholds in IV-VI chalcogenide glasses, Phys. Rev. Lett. 62 (1989) 808-810.
Axon Technologies Corporation, Technology Description:Programmable Metalization Cell(PMC), pp. 1-6 (Pre-May 2000).
Baranovskii, S.D.; Cordes, H., On the conduction mechanism in ionic glasses, J. Chem. Phys. 111 (1999) 7546-7557.
Belin, R.; Taillades, G.; Pradel, A.; Ribes, M., Ion dynamics in superionic chalcogenide glasses: complete conductivity spectra, Solid state Ionics 136-137 (2000) 1025-1029.
Belin, R.; Zerouale, A.; Pradel, A.; Ribes, M., Ion dynamics in the argyrodite compound Ag7GeSe5I: non-Arrhenius behavior and complete conductivity spectra, Solid State Ionics 143 (2001) 445-455.
Benmore, C.J.; Salmon, P.S., Structure of fast ion conducting and semiconducting glassy chalcogenide alloys, Phys. Rev. Lett. 73 (1994) 264-267.
Bernede, J.C., Influence du metal des electrodes sur les caracteristiques courant-tension des structures

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