Method of forming floating gate array of flash memory device

Details Method of forming floating gate array of flash memory device Method of forming floating gate array of flash memory device

2006-12-19

2008-08-19

Lee, Hsien Ming (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S265000, C257S315000, C257SE21682, C257SE27103

Reexamination Certificate

active

07413953

ABSTRACT:
The method of forming a floating gate array of a flash memory device includes: (a) sequentially forming a tunnel oxide film, a floating gate forming film, a capping oxide film and a first nitride film on a semiconductor substrate with an active device region defined by device isolation films; (b) patterning the first nitride film to form a first nitride film pattern; (c) forming first oxide film spacers on sidewalls of the first nitride film pattern; (d) selectively removing the first nitride film pattern; (e) forming a plurality of second nitride film patterns separated by the first oxide film spacers on the capping oxide film; (f) selectively removing the first oxide film spacers interposed between the plurality of second nitride film patterns and a portion of the capping oxide film to expose a surface of the floating gate forming film between the second nitride film patterns; (g) forming a plurality of floating gate patterns by removing a portion of the floating gate forming film exposed using the second nitride film patterns as an etching mask; and (h) oxidizing the sidewall of each of the plurality of floating gate patterns to form sidewall oxide films therebetween.

REFERENCES:
patent: 5328810 (1994-07-01), Lowrey et al.
patent: 6063688 (2000-05-01), Doyle et al.
patent: 6342451 (2002-01-01), Ahn
patent: 6893972 (2005-05-01), Rottstegge et al.
patent: 2006/0211260 (2006-09-01), Tran et al.

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