Method of depositing noble metal electrode using...

Details Method of depositing noble metal electrode using... Method of depositing noble metal electrode using...

Filed on

2005-08-22

Date issued

2008-10-14

Examiner

Lebentritt, Michael S (Department: 2829)

Patent Class

Semiconductor device manufacturing: process

SubClass

Coating with electrically or thermally conductive material

SubSubClass

To form ohmic contact to semiconductive material

Other Related Categories

C438S644000, C438S654000, C438S680000, C438S681000, C438S686000, C257SE21009, C257SE21021, C257SE21168, C257SE21295, C257SE21584

Type

Reexamination Certificate

Status

active

Patent number

07435678

Description

ABSTRACT:
Provided is a method of depositing a noble metal layer using an oxidation-reduction reaction. The method includes flowing a noble metal source gas, an oxidizing gas, and a reducing gas into a reaction chamber; and generating plasma in the reaction chamber to form a noble metal layer or a noble metal oxide layer on a bottom structure.

REFERENCES:
patent: 6271131 (2001-08-01), Uhlenbrock et al.
patent: 2001/0019241 (2001-09-01), Srivastava et al.
patent: 2002/0192900 (2002-12-01), Athavale et al.
patent: 2004/0232467 (2004-11-01), Otsuki et al.
patent: 2005/0020060 (2005-01-01), Aaltonen et al.

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