Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2005-05-02

2008-10-14

Whitehead, Jr., Carl (Department: 2813)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S690000, C438S623000, C438S634000, C438S424000, C438S692000

Reexamination Certificate

active

07435682

ABSTRACT:
Disclosed is a method of manufacturing a semiconductor device comprising forming an insulating film above a substrate, forming a recess in the insulating film, successively forming an underlying layer, an immediate layer and a resist film above the insulating film having the recess formed thereon, the underlying layer being formed by a process comprising forming a first organic film above the insulating film, chemically mechanically polishing the first organic film to expose a surface of the insulating film and to remain the first organic film selectively in the recess, and forming a second organic film above the insulating film and above the first organic film, and subjecting the resist film to patterning exposure.

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Notification of Reasons for Rejection issued by the Japanese Patent Office on Oct. 17, 2006, for Japanese Patent Application No. 2005-050603, and English-language translation thereof.

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