Methods for forming a wrap-around gate field effect transistor

Details Methods for forming a wrap-around gate field effect transistor Methods for forming a wrap-around gate field effect transistor

2007-04-13

2008-10-14

Menz, Douglas M (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S177000, C438S197000

Reexamination Certificate

active

07435653

ABSTRACT:
A field effect transistor is formed having wrap-around, vertically-aligned, dual gate electrodes. Starting with a silicon-on-insulator (SOI) structure having a buried silicon island, a vertical reference edge is defined, by creating a cavity within the SOI structure, and used during two etch-back steps that can be reliably performed. The first etch-back removes a portion of an oxide layer for a first distance over which a gate conductor material is then applied. The second etch-back removes a portion of the gate conductor material for a second distance. The difference between the first and second distances defines the gate length of the eventual device. After stripping away the oxide layers, a vertical gate electrode is revealed that surrounds the buried silicon island on all four side surfaces.

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