Atomic layer deposited Zr-Sn-Ti-O films using TiI 4

Details Atomic layer deposited Zr-Sn-Ti-O films using TiI 4 Atomic layer deposited Zr-Sn-Ti-O films using TiI 4

2005-08-29

2008-08-12

Smith, Matthew S. (Department: 2823)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C427S124000, C257SE21129

Reexamination Certificate

active

07410917

ABSTRACT:
Various structures having a dielectric film containing Zr—Sn—Ti—O formed by atomic layer deposition using a TiI4precursor and a method of fabricating structures having such a dielectric film produce the structures with a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. Dielectric films containing Zr—Sn—Ti—O formed by atomic layer deposition using TiI4are thermodynamically stable such that the Zr—Sn—Ti—O will have minimal reactions with a silicon substrate or other structures during processing.

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