Thin film transistor array panel and a manufacturing method...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer

Reexamination Certificate

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C257S059000, C257S072000

Reexamination Certificate

active

07435629

ABSTRACT:
A method of manufacturing a thin film transistor array panel and a thin film transistor array panel are provided. The method includes: forming a gate line and a storage electrode line on a substrate; forming a gate insulating layer on the gate line and the storage electrode line; forming a semiconductor layer on the gate insulating layer; forming a data line and a drain electrode on the semiconductor layer; depositing a passivation layer on the data line and the drain electrode; forming a photoresist including a first portion and a second portion on the passivation layer; etching the passivation layer using the photoresist to expose a portion of the data line and a first portion of the gate insulating layer; removing the second portion of the photoresist; etching the passivation layer and the first portion of the gate insulating layer using the photoresist to expose a second portion of the gate insulating layer and a portion of the drain electrode and a portion of the gate line; depositing a conductive film on the first transformed photoresist; and removing the first transformed photoresist to form a pixel electrode connected to the exposed portion of the drain electrode.

REFERENCES:
patent: 2001/0046016 (2001-11-01), Park et al.
patent: 2004/0041149 (2004-03-01), Baek et al.
patent: 2004/0056251 (2004-03-01), Kim et al.
patent: 2004/0099865 (2004-05-01), Tak et al.
patent: 2004/0183955 (2004-09-01), Souk et al.
patent: 2004/0195573 (2004-10-01), Kim
patent: 2005/0030440 (2005-02-01), Lee et al.
patent: 1517771 (2004-08-01), None

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