Structure of bumps forming on an under metallurgy layer and...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C257S738000

Reexamination Certificate

active

07432188

ABSTRACT:
A structure of bumps formed on an under bump metallurgy layer (UBM layer) and a method for making the same, wherein the structure includes a wafer, a UBM layer, a second photo resist and a bump. The wafer has a plurality of solder pads and a protection layer, and the protection layer covers the surface of the wafer and exposes parts of the solder pads. The UBM layer is disposed on the solder pads and the protection layers, and has an undercut structure. The second photo resist is disposed in the undercut structure. The bump is disposed on the UMB layer, so that the UMB layer will not react with the bump during a reflow process and the problem of stress concentration will be avoided so as to make the bump more stable.

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patent: 5937320 (1999-08-01), Andricacos et al.
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patent: 6774026 (2004-08-01), Wang et al.
patent: 2004/0266161 (2004-12-01), Horng
patent: 2007/0087544 (2007-04-01), Chang et al.

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