Structure and method for accurate deep trench resistance...

Details Structure and method for accurate deep trench resistance... Structure and method for accurate deep trench resistance...

2007-09-11

2008-08-05

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S301000

Reexamination Certificate

active

07408229

ABSTRACT:
A test structure for implementing resistance measurement of a deep trench formed in a semiconductor device includes a deep trench formed within a semiconductor substrate. The deep trench has a dielectric material formed on upper portions of sidewall surfaces thereof, and includes a conductive fill material therein. A doped buried plate region encompasses a bottom portion of the deep trench, and a doped horizontal n-well band is in electrical contact with an upper portion of the doped buried plate region. A doped vertical n-well band is in electrical contact with the doped horizontal n-well band.

REFERENCES:
patent: 5448090 (1995-09-01), Geissler et al.
patent: 6495883 (2002-12-01), Shibata et al.
patent: 6627513 (2003-09-01), Tsai et al.
patent: 6759702 (2004-07-01), Radens et al.
patent: 7319259 (2008-01-01), Cheng et al.
patent: 2004/0198014 (2004-10-01), Wu et al.
patent: 2005/0101094 (2005-05-01), Kito et al.
patent: 2005/0127422 (2005-06-01), Hsiao et al.
patent: 2005/0176198 (2005-08-01), Kudelka

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