Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-04-06
2008-08-12
Wilczewski, M. (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE21619, C257SE21634
Reexamination Certificate
active
07410875
ABSTRACT:
A method for fabricating a semiconductor structure is described. A substrate is provided, having thereon a gate structure and a spacer on the sidewall of the gate structure and having therein an S/D extension region beside the gate structure. An opening is formed in the substrate beside the spacer, and then an S/D region is formed in or on the substrate at the bottom of the opening. A metal silicide layer is formed on the S/D region and the gate structure, and then a stress layer is formed over the substrate.
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Cheng Tzyy-Ming
Huang Cheng-Tung
Hung Wen-Han
Jeng Li-Shian
Ting Shyh-Fann
J.C. Patents
United Microelectronics Corp.
Wilczewski M.
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