Transistors, semiconductor integrated circuit...

Details Transistors, semiconductor integrated circuit... Transistors, semiconductor integrated circuit...

2007-02-09

2008-10-21

Kebede, Brook (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29201, C438S197000, C438S270000

Reexamination Certificate

active

07439581

ABSTRACT:
Provided are transistors, semiconductor integrated circuit interconnections and methods of forming the same. The transistors, semiconductor integrated circuit interconnections and methods of forming the same may improve electrical characteristics between gate electrodes or interconnection electrodes and simplify a semiconductor fabrication process related to gate electrodes or interconnection electrodes. A material layer having first and second regions may be prepared. A trench may be formed in a selected portion of the first region. Transistors or semiconductor integrated circuit interconnections may be in the first and second regions, respectively. One of the transistors or the semiconductor integrated circuit interconnections may be formed in the trench. The transistors or the semiconductor integrated circuit interconnections may be electrically insulated from each other.

REFERENCES:
patent: 6498071 (2002-12-01), Hijzen et al.
patent: 6835615 (2004-12-01), Ohtomo
patent: 7005348 (2006-02-01), Lee
patent: 2006/0278921 (2006-12-01), Pellizzer et al.
patent: 10-2006-0053558 (2006-05-01), None
patent: 10-2003-0056914 (2007-07-01), None
Korean Decision of Grant dated Aug. 29, 2007.

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