Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-01-19
2008-08-26
Smith, Zandra V. (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S259000, C438S268000, C438S430000, C438S443000
Reexamination Certificate
active
07416947
ABSTRACT:
A trench MIS device includes a thick dielectric layer at the bottom of the trench. The thick dielectric layer can be formed by the deposition or thermal growth of a dielectric material, such as silicon dioxide, on the bottom portion of the trench. The thick dielectric layer, which reduces the capacitance between the drain and gate of the device, can be formed in both the active areas of the device, where the switching function is performed, and in the inactive areas where, among other things, contacts are made to the gate electrode.
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Duong Khanh
Patentability Associates
Siliconix incorporated
Smith Zandra V.
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