Self-aligned body contact for a semiconductor-on-insulator...

Details Self-aligned body contact for a semiconductor-on-insulator... Self-aligned body contact for a semiconductor-on-insulator...

2006-04-04

2008-10-21

Lebentritt, Michael S (Department: 2829)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S152000, C438S155000, C438S156000, C438S257000, C438S388000, C257SE21410, C257SE21112, C257SE21372, C257SE21652, C257SE21653

Reexamination Certificate

active

07439135

ABSTRACT:
A structure and method of forming a body contact for an semiconductor-on-insulator trench device. The method including: forming set of mandrels on a top surface of a substrate, each mandrel of the set of mandrels arranged on a different corner of a polygon and extending above the top surface of the substrate, a number of mandrels in the set of mandrels equal to a number of corners of the polygon; forming sidewall spacers on sidewalls of each mandrel of the set of mandrels, sidewalls spacers of each adjacent pair of mandrels merging with each other and forming a unbroken wall defining an opening in an interior region of the polygon, a region of the substrate exposed in the opening; etching a contact trench in the substrate in the opening; and filling the contact trench with an electrically conductive material to form the contact.

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