Plasma processing method and plasma processing device

Details Plasma processing method and plasma processing device Plasma processing method and plasma processing device

2006-01-23

2008-10-14

Norton, Nadine (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S689000, C438S702000, C134S001100, C134S022100, C216S067000, C216S071000, C156S345480

Reexamination Certificate

active

07435687

ABSTRACT:
The invention provides a plasma processing method and plasma processing device for manufacturing semiconductor devices in which the number of foreign particles being adhered to the wafer is reduced greatly and the yield is improved. In a plasma processing device having a plasma source capable of controlling plasma distribution, the shape of a sheath/bulk boundary above the wafer is controlled to a convexed shape when the plasma is turned on and off. By adding a step of applying a low source power and wafer bias power when the plasma is turned on and off in order to realize an out-high plasma distribution, it is possible to form a sheath that is thicker near the center of the wafer and thinner at the outer circumference portion thereof.

REFERENCES:
patent: 6062163 (2000-05-01), Patrick et al.
patent: 6576559 (2003-06-01), Nakata et al.
patent: 6676800 (2004-01-01), Festa et al.
patent: 6777037 (2004-08-01), Sumiya et al.
patent: 2001/0027843 (2001-10-01), Komino et al.
patent: 2004/0026372 (2004-02-01), Takenaka et al.
patent: 2004/0050495 (2004-03-01), Sumiya et al.
patent: 2006/0191555 (2006-08-01), Yoshida et al.
patent: 05-047712 (1993-02-01), None
patent: 11-162946 (1999-06-01), None
H.H. Hwang, Appl. Phys. Lett 68, p. 3716, 1996.
Journal of Applied Physics 97, 043306, 2005.
Clean Technology, Jan. 2004, p. 5-12.

Affiliated with

Also associated with

Rating

Plasma processing method and plasma processing device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Plasma processing method and plasma processing device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma processing method and plasma processing device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3998845