Method for performing full-chip manufacturing reliability...

Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C716S030000, C382S144000, C430S005000

Reexamination Certificate

active

07434195

ABSTRACT:
A method of generating a mask for use in an imaging process pattern. The method includes the steps of: (a) obtaining a desired target pattern having a plurality of features to be imaged on a substrate; (b) simulating a wafer image utilizing the target pattern and process parameters associated with a defined process; (c) defining at least one feature category; (d) identifying features in the target pattern that correspond to the at least one feature category, and recording an error value for each feature identified as corresponding to the at least one feature category; and (e) generating a statistical summary which indicates the error value for each feature identified as corresponding to the at least one feature category.

REFERENCES:
patent: 4894790 (1990-01-01), Yotsuya et al.
patent: 5097138 (1992-03-01), Wakabayashi et al.
patent: 5307296 (1994-04-01), Uchida et al.
patent: 5307421 (1994-04-01), Darboux et al.
patent: 5319564 (1994-06-01), Smayling et al.
patent: 5416729 (1995-05-01), Leon et al.
patent: 5621652 (1997-04-01), Eakin
patent: 5795688 (1998-08-01), Burdorf et al.
patent: 5825647 (1998-10-01), Tsudaka
patent: 5966312 (1999-10-01), Chen
patent: 6081659 (2000-06-01), Garza et al.
patent: 6289499 (2001-09-01), Rieger et al.
patent: 6553559 (2003-04-01), Liebmann et al.
patent: 6873720 (2005-03-01), Cai et al.
patent: 6925202 (2005-08-01), Karklin et al.
patent: 2002/0026626 (2002-02-01), Randall et al.
patent: 2002/0164064 (2002-11-01), Karklin et al.
patent: 2002/0164065 (2002-11-01), Cai et al.
patent: 2002/0188925 (2002-12-01), Higashi
patent: 2002/0196975 (2002-12-01), Cahill
patent: 2003/0126581 (2003-07-01), Pang et al.
patent: 2003/0219154 (2003-11-01), Medvedeva et al.
patent: 2004/0073885 (2004-04-01), Ohnuma et al.
patent: 2005/0076322 (2005-04-01), Ye et al.
patent: 2005/0120327 (2005-06-01), Ye et al.
patent: 2005/0142449 (2005-06-01), Shi et al.
patent: 2005/0190957 (2005-09-01), Cai et al.
patent: 2005/0235246 (2005-10-01), Smith et al.
patent: WO 02/075793 (2002-09-01), None
Hsu, et al., “Full-chip manufacturing reliability check implementation for 90-nm, and 65-nm, nodes using CPL and DDL,” Proceedings of SPIE, Apr. 14-16, 2004, pp. 402-413, vol. 5446.
Australian Search Report and Written Opinion issued in corresponding Singapore Patent Application No. SG 200505920-9, dated Sep. 1, 2006.
Pati, et al. “Exploiting Structure in Fast Aerial Image Computation for Integrated Circuit Patterns.” IEEE Transactions on Semiconductor Manufacturing, Feb. 1997, pp. 62-74, vol. 10, No. 1, IEEE, USA, XP002256517.
Mack, et al. “Metrology, Inspection, and Process Control for Microlithography XV.” Proceedings of SPIE, Feb. 26, 2001-Mar. 1, 2001, pp. 377-384, vol. 4344, The International Society for Optical Engineering, XP 008022568.
Cobb, et al. “Mathematical and CAD Framework for Proximity Correction.” Optical Microlithography IX, Mar. 13-15, 1996, pp. 208-222, vol. 2726, SPIE, XP008022569.
Crisalle, et al. “A Comparison of the Optical Projection Lithography Simulators in Sample and Prolith.” IEEE Transactions on Semiconductor Manufacturing, Feb. 1992, pp. 14-26, vol. 5, No. 1, IEEE.
Gopalarao, et al. “An Integrated Technology CAD System for Process and Device Designers.” IEEE Transactions on Very Large Scale Integration (VLSI) Systems, Dec. 1993, pp. 482-490, vol. 1, No. 4, IEEE.
Neubauer, et al. “Imaging VLSI Cross Sections by Atomic Force Microscopy.” 1992, pp. 299-303, IEEE/IRPS.
Rodgers. “Application of the Atomic Force Microscope to Integrated Circuit Reliability and Failure Analysis.” 1991, pp. 250-254, IEEE/IRPS.
Qian, et al. “A New Scalar Planewave Model for High NA Lithography Simulations.” 1994, pp. 45-48, IEEE.
Barouch, et al. “Modeling Process Latitude in UV Projection Lithography.” IEEE Electron Device Letters, Oct. 1991, pp. 513-514, vol. 12, No. 10, IEEE.
Beacham, et al. “Applications of an Atomic Force Metrology System in Semiconductor Manufacturing.” SPIE, pp. 311-321, vol. 1926.
“AFMs: What Will Their Role Be?” Semiconductor International, Aug. 1993, pp. 62-68.
Prolith/2 User's Manual, Finle Technologies, 1990-1993, Version 3.0 for the Macintosh.
Michael Hsu et al., Full-chip Manufacturing Reliability Check Implementation for 90nm and 65nm Nodes Using CPL™ and DDL™, pp. 402-413, Proc. Of SPIE, vol. 5446.
Michael Hsu et al., Full-chip Manufacturing Reliability Check and Correction (MRC2™)—a First Step toward Design for Manufacturing with Low k1Lithography, pp. 382-393, XP-002444533, Proc. Of SPIE, vol. 5567.
European Search Report dated Aug. 21, 2007.
Michael Hsu et al., Full-chip Manufacturing Reliability Check Implementation for 90nm and 65nm Nodes Using CPL™ and DDL™, pp. 402-413, Proc. Of SPIE, vol. 5446.
Michael Hsu et al., Full-chip Manufacturing Reliability Check and Correction (MRC2™)—a First Step toward Design for Manufacturing with Low k1Lithography, pp. 382-393, XP-002444533, Proc. Of SPIE, vol. 5567.
European Search Report dated Aug. 21, 2007.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for performing full-chip manufacturing reliability... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for performing full-chip manufacturing reliability..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for performing full-chip manufacturing reliability... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3998825

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.