Method of manufacturing lateral MOSFET structure of an...

Details Method of manufacturing lateral MOSFET structure of an... Method of manufacturing lateral MOSFET structure of an...

2005-09-29

2008-08-12

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S328000, C438S519000, C438S521000, C257SE27051

Reexamination Certificate

active

07410860

ABSTRACT:
Apparatus and Methods for the self-alignment of separated regions in a lateral MOSFET of an integrate circuit. In one embodiment, a method comprising, forming a relatively thin dielectric layer on a surface of a substrate. Forming a first region of relatively thick material having a predetermined lateral length on the surface of the substrate adjacent the relatively thin dielectric layer. Implanting dopants to form a top gate using a first edge of the first region as a mask to define a first edge of the top gate. Implanting dopants to form a drain contact using a second edge of the first region as a mask to define a first edge of the drain contact, wherein the distance between the top gate and drain contact is defined by the lateral length of the first region.

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Disney, D.R. et al., “A new 800V lateral MOSFET with dual conduction paths”, Jun. 2001, ISPS '01, Proc. 13thSym., pp. 399-402.

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