Semiconductor device

Details Semiconductor device Semiconductor device

2007-04-11

2008-08-26

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21135

Reexamination Certificate

active

07416934

ABSTRACT:
A dose of arsenic for an extension region in an NMOS transistor is in a range from 5×1014to 2×1015ions/cm2and preferably in a range from 1.1×1015to 1.5×1015ions/cm2. Also, in addition to arsenic, a low concentration of phosphorus is doped into the extension region by ion implantation. Consequently, with a semiconductor device of the CMOS structure, it is possible to prevent unwanted creeping of silicide that occurs often in the shallow junction region depending on a concentration of an impurity having a low diffusion coefficient as represented by arsenic. Further, not only can the resistance in the shallow junction region be lowered, but also an amount of overlaps can be optimized in each transistor.

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