Method of forming integrated circuitry

Details Method of forming integrated circuitry Method of forming integrated circuitry

2006-07-31

2008-10-21

Menz, Laura M (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S238000, C438S595000

Reexamination Certificate

active

07439138

ABSTRACT:
The invention includes methods of forming integrated circuitry, methods of forming memory circuitry, and methods of forming field effect transistors. In one implementation, conductive metal silicide is formed on some areas of a substrate and not on others. In one implementation, conductive metal silicide is formed on a transistor source/drain region and which is spaced from an anisotropically etched sidewall spacer proximate a gate of the transistor.

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