Methods of making substitutionally carbon-doped crystalline...

Details Methods of making substitutionally carbon-doped crystalline... Methods of making substitutionally carbon-doped crystalline...

2006-01-30

2008-10-21

Kunemund, Robert (Department: 1792)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

C438S478000, C438S481000, C438S643000, C117S088000, C117S093000, C117S102000

Reexamination Certificate

active

07438760

ABSTRACT:
Methods of making Si-containing films that contain relatively high levels of substitutional dopants involve chemical vapor deposition using trisilane and a dopant precursor. Extremely high levels of substitutional incorporation may be obtained, including crystalline silicon films that contain 2.4 atomic % or greater substitutional carbon. Substitutionally doped Si-containing films may be selectively deposited onto the crystalline surfaces of mixed substrates by introducing an etchant gas during deposition.

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