Semiconductor device having low-k dielectric film in pad...

Details Semiconductor device having low-k dielectric film in pad... Semiconductor device having low-k dielectric film in pad...

2006-01-09

2008-08-12

Malsawma, Lex (Department: 2892)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE21577

Reexamination Certificate

active

07410896

ABSTRACT:
A low-k dielectric film is formed on an entire surface of a substrate having a pad region and a circuit region. A resist pattern is formed on the low-k dielectric film, and an opening is formed in the low-k dielectric film of the pad region using the resist pattern as a mask. A silicon oxide film having strength higher than the low-k dielectric film is formed in the opening using liquid-phase deposition method. Wirings are formed in the silicon oxide film of the pad region and in the low-k dielectric film of the circuit region using damascene method.

REFERENCES:
patent: 5751066 (1998-05-01), Havemann
patent: 6037668 (2000-03-01), Cave et al.
patent: 6124198 (2000-09-01), Moslehi
patent: 6222269 (2001-04-01), Usami
patent: 6362531 (2002-03-01), Stamper et al.
patent: 6372661 (2002-04-01), Lin et al.
patent: 6518166 (2003-02-01), Chen et al.
patent: 6777320 (2004-08-01), Chiang et al.
patent: 2003/0020163 (2003-01-01), Hung et al.
patent: 2003/0074789 (2003-04-01), Chen et al.
patent: 2003/0155642 (2003-08-01), Davis et al.

Affiliated with

Also associated with

Rating

Semiconductor device having low-k dielectric film in pad... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having low-k dielectric film in pad..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having low-k dielectric film in pad... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3993261