Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Fluid growth from gaseous state combined with subsequent...
Reexamination Certificate
2004-03-12
2008-09-23
Kunemund, Robert M. (Department: 1792)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Fluid growth from gaseous state combined with subsequent...
C438S592000, C117S086000, C117S092000
Reexamination Certificate
active
07427556
ABSTRACT:
A method for blanket depositing a SiGe film comprises intermixing a silicon source, a germanium source and an etchant to form a gaseous precursor mixture. The method further comprises flowing the gaseous precursor mixture over a substrate under chemical vapor deposition conditions to deposit a blanket layer of epitaxial SiGe onto the substrate, whether patterned or un-patterned.
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Arena Chantal
Cody Nyles
Tomasini Pierre
ASM America Inc.
Knobbe Martens Olson & Bear LLP
Kunemund Robert M.
Rao G. Nagesh
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