Non-volatile semiconductor memory device and method of...

Details Non-volatile semiconductor memory device and method of... Non-volatile semiconductor memory device and method of...

2007-04-11

2008-10-07

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S326000

Reexamination Certificate

active

07432154

ABSTRACT:
A non-volatile semiconductor memory device includes a semiconductor substrate, a memory cell array formed on the semiconductor substrate, and including a first gate insulator having a first thickness. The device further includes a high-voltage transistor circuit formed on the semiconductor substrate, and including a second gate insulator having a second thickness greater than the first thickness, and a peripheral circuit formed on the semiconductor substrate, and including the second gate insulator.

REFERENCES:
patent: 5600164 (1997-02-01), Ajika et al.
patent: 6159799 (2000-12-01), Yu
patent: 6165849 (2000-12-01), An et al.
patent: 6222225 (2001-04-01), Nakamura et al.
patent: 6316293 (2001-11-01), Fang
patent: 6605506 (2003-08-01), Wu
patent: 6624468 (2003-09-01), Takebuchi
patent: 2000-174150 (2000-06-01), None
patent: 2001-060674 (2001-03-01), None
patent: 2002-64157 (2002-02-01), None

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