Recessed channel field effect transistor (FET) device

Details Recessed channel field effect transistor (FET) device Recessed channel field effect transistor (FET) device

2005-10-21

2008-09-30

Smoot, Stephen W (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S344000, C257SE29260

Reexamination Certificate

active

07429769

ABSTRACT:
A method for forming a field effect transistor device employs a self-aligned etching of a semiconductor substrate to form a recessed channel region in conjunction with a pair of raised source/drain regions. The method also provides for forming and thermally annealing the pair of source/drain regions prior to forming a pair of lightly doped extension regions within the field effect transistor device. In accord with the foregoing features, the field effect transistor device is fabricated with enhanced performance.

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