Semiconductor device having silicide formed with blocking...

Details Semiconductor device having silicide formed with blocking... Semiconductor device having silicide formed with blocking...

2004-01-02

2008-10-21

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29040

Reexamination Certificate

active

07439593

ABSTRACT:
Some embodiments include an isolation layer defining an active region of a substrate, a gate pattern formed on the active region, and source/drain regions formed in the active region. Sidewall spacers are formed on sidewalls of the gate pattern, and a blocking insulation layer is formed on the isolation layer and on a portion of the active region neighboring the isolation layer. A silicide layer is formed on source/drain regions between the blocking insulation layer and the sidewall spacers. Some embodiments include defining an active region of a substrate using an isolation layer, forming a gate pattern on the active region, implanting impurities into the active region, and forming a spacer insulation layer on a surface of the substrate with the gate pattern. A region of the spacer insulation layer becomes thinner the closer it is to the gate pattern. Other embodiments are described in the claims.

REFERENCES:
patent: 5153145 (1992-10-01), Lee et al.
patent: 5659194 (1997-08-01), Iwamatsu et al.
patent: 5899742 (1999-05-01), Sun
patent: 6025267 (2000-02-01), Pey et al.
patent: 6339245 (2002-01-01), Maa et al.
patent: 6573583 (2003-06-01), Hokazono
patent: 2002/0109196 (2002-08-01), Fujisawa et al.
patent: 2003/0230811 (2003-12-01), Kim
patent: 05-304108 (1993-11-01), None
English language abstract of Japanese Publication No. 05-304108.

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