Field-effect transistor

Details Field-effect transistor Field-effect transistor

2007-05-22

2008-09-16

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S192000, C257S194000, C257SE29188, C257SE29246

Reexamination Certificate

active

07425721

ABSTRACT:
A field-effect transistor is provided which includes: a first nitride semiconductor layer having a lattice constant a1and a bandgap Eg1; a second nitride semiconductor layer stacked on the first nitride semiconductor layer and having a lattice constant a2and a bandgap Eg2; a source electrode and a drain electrode formed on the second nitride semiconductor layer; a piezo-effect film formed on the second nitride semiconductor layer in a region between the source electrode and the drain electrode; and a gate electrode formed on a region of the piezo-effect film. The relation between the lattice constants a1and a2is a1>a2. The relation between the bandgaps Eg1and Eg2is Eg1<Eg2. The residual polarization density at that surface of the piezo-effect film which faces the second nitride semiconductor layer is equal to or higher than the density of electric charges of a two-dimensional electron gas layer at an interface between the first nitride semiconductor layer and the second nitride semiconductor layer, and negative charges are polarized at that surface of the piezo-effect film which faces the second nitride semiconductor layer.

REFERENCES:
patent: 5192987 (1993-03-01), Khan et al.
patent: 2005/0189559 (2005-09-01), Saito et al.
patent: 2006/0214188 (2006-09-01), Kawasaki et al.
patent: 2006/0237711 (2006-10-01), Teraguchi
patent: 2004-273486 (2004-09-01), None
patent: 2004-335960 (2004-11-01), None
patent: 2005-79346 (2005-03-01), None
patent: 2005-244072 (2005-09-01), None
patent: 2006-32650 (2006-02-01), None
patent: 2006-156816 (2006-06-01), None
patent: 2006-269534 (2006-10-01), None
patent: 2006-332593 (2006-12-01), None
patent: 2007-109830 (2007-04-01), None
patent: 2007-165719 (2007-06-01), None
Myers et al., “GaN and Related Alloys—1999” Materials Research Society Symposium Proceeding, vol. 595, 1999, W6.2.7.

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