Method for forming gate structure in flash memory device

Details Method for forming gate structure in flash memory device Method for forming gate structure in flash memory device

2005-12-23

2008-05-06

Lee, Hsien-Ming (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S211000, C438S296000, C438S424000, C257SE27001, C257SE29129, C257SE21179

Reexamination Certificate

active

07368346

ABSTRACT:
Device isolation insulation layers passing through an insulation layer and a substrate, are formed, and a portion of them is removed. The insulation layer is removed. A gate oxide layer and a first conductive layer sequentially formed over the device isolation insulation layers, are isolated. Portions of the device isolation insulation layers are removed to increase an effective area of the first conductive layer. A laminated layer is formed, over the gate oxide layer and the first conductive layer that are isolated, and a portion of it is removed. A second conductive layer is formed over a remaining portion of the laminated layer, filling a gap created by removing the portion of the laminated layer. Predetermined portions of the second conductive layer are removed, thereby forming gate structures.

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