Method for fabricating semiconductor device

Details Method for fabricating semiconductor device Method for fabricating semiconductor device

2005-12-30

2008-05-20

Le, Thao X. (Department: 2892)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C257SE27091, C438S270000, C438S424000

Reexamination Certificate

active

07375016

ABSTRACT:
Disclosed herein is a method for fabricating a memory device. According to the present invention, during an etching process for forming a recess gate region, a device isolation film is etched using a mask partially exposing a channel region and its neighboring device isolation film, and then a semiconductor substrate is etched, thus preventing a silicon horn in the recess gate region from being formed. Accordingly, a margin for the etching process is increased.

REFERENCES:
patent: 7094644 (2006-08-01), Kim
patent: 7163865 (2007-01-01), Kim
patent: 7189605 (2007-03-01), Lee
patent: 2004/0137667 (2004-07-01), Ogawa
patent: 2007/0241420 (2007-10-01), Choi
patent: 1020050027294 (2005-03-01), None
J.Y. Kim et al., “The Breakthrough in data retention time of DRAM using Recess-Channel-Array Transistor(RCAT) for 88nm feature size and beyond”, 2003 Symposium on VLSI Technology Digest of Technical Papers, pp. 11-12.

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