Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-12-23
2008-09-30
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S618000, C257S628000, C257SE29003, C257SE29105
Reexamination Certificate
active
07429763
ABSTRACT:
One aspect of the present invention relates to a method for forming a strained semiconductor structure. In various embodiments, at least two strong bonding regions are defined for a desired bond between a crystalline semiconductor membrane and a crystalline semiconductor substrate. The two strong bonding regions are separated by a weak bonding region. The membrane is bonded to the substrate at a predetermined misorientation. The membrane is pinned to the substrate in the strong bonding regions. The predetermined misorientation provides the membrane in the weak bonding region with a desired strain. In various embodiments, the membrane is bonded to the substrate at a predetermined twist angle to biaxially strain the membrane in the weak bonding region. In various embodiments, the membrane is bonded to the substrate at a predetermined tilt angle to uniaxially strain the membrane in the weak bonding region. Other aspects are provided herein.
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Micro)n Technology, Inc.
Pert Evan
Schwegman Lundberg & Woessner, P.A.
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