Semiconductor device

Details Semiconductor device Semiconductor device

2006-11-15

2008-09-09

Garber, Charles D. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S197000, C438S199000, C438S216000, C438S243000, C257SE21624, C257SE21625

Reexamination Certificate

active

07422944

ABSTRACT:
A semiconductor device comprises a semiconductor substrate, a first circuit formed on the substrate, and a second circuit connected to the first circuit as an input/output portion thereof and powered by a voltage higher than that for the first circuit, the first circuit including a first and a second field-effect transistor, the first drain region of the first transistor accompanying a first load capacitance, the second drain region of the second transistor accompanying a second load capacitance smaller than the first load capacitance, and the first gate insulation film of the first transistor having an average relative dielectric constant higher than that of the second gate insulation film of the second transistor, thereby realizing a high operation speed.

REFERENCES:
patent: 5818099 (1998-10-01), Burghartz
patent: 6027961 (2000-02-01), Maiti et al.
patent: 6828185 (2004-12-01), Lim et al.
patent: 2002/0000593 (2002-01-01), Nishiyama et al.
patent: 2002/0006054 (2002-01-01), Shukuri et al.
patent: 2002/0009851 (2002-01-01), Shukuri et al.
patent: 2002-16063 (2002-01-01), None
patent: 2000-307010 (2002-11-01), None
G. Lucovsky, et al., “Microscopic Model for Enhanced Dielectric Constants in Low Concentration SiO2-Rich Noncrystalline Zr and Hf Silicate Alloys,” Applied Physics Letters, vol. 77, No. 18, Oct. 30, 2000, pp. 2912-2914.
Angus I. Kingon, et al., “Alternative Dielectrics to Silicon Dioxide for Memory and Logic Devices,” Nature, vol. 406, Aug. 13, 2000, pp. 1032-1038.

Affiliated with

Also associated with

Rating

Semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3982532