Split gate type nonvolatile memory device

Details Split gate type nonvolatile memory device Split gate type nonvolatile memory device

2006-04-28

2008-09-30

Le, Dung A. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S316000, C257S315000, C257SE21682, C257SE21103, C438S257000, C438S258000, C438S593000

Reexamination Certificate

active

07429766

ABSTRACT:
In a split gate type nonvolatile memory device, a supplementary layer pattern is disposed on a source region of a semiconductor substrate. Since the source region is vertically extended by virtue of the presence of the supplementary layer pattern, it is therefore possible to increase an area of a region where a floating gate overlaps the source region and the supplementary layer pattern. Accordingly, the capacitance of a capacitor formed between the source and the floating gate increases so that it is possible for the nonvolatile memory device to perform program/erase operations at a low voltage level.

REFERENCES:
patent: 6147379 (2000-11-01), Hori et al.
patent: 6190968 (2001-02-01), Kalnitsky et al.
patent: 6312989 (2001-11-01), Hsieh et al.
patent: 2003/0038313 (2003-02-01), Furuhata
patent: 07-115142 (1995-05-01), None

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