Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-02-28
2008-03-04
Loke, Steven (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S316000, C438S201000, C438S243000, C438S259000, C438S270000
Reexamination Certificate
active
07339228
ABSTRACT:
A first plane of memory cells is formed on mesas of the array. A second plane of memory cells is formed in valleys adjacent to the mesas. The second plurality of memory cells is coupled to the first plurality of memory cells through a series connection of their source/drain regions. Wordlines couple rows of memory cells of the array. Metal shields are formed between adjacent wordlines and substantially parallel to the wordlines to shield the floating gates of adjacent cells.
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Ahn Kie Y.
Forbes Leonard
Leffert Jay & Polglaze P.A.
Loke Steven
Micro)n Technology, Inc.
Nguyen Tram H
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