Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-05-31
2008-03-25
Pham, Long (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S279000
Reexamination Certificate
active
07348245
ABSTRACT:
Manufacturing method of a semiconductor device for forming a rewritable nonvolatile memory cell including a first field effect transistor for memory, a circuit including a second field effect transistor and a circuit including a third field effect transistor, including forming a gate insulating film over a semiconductor substrate, a gate electrode over the gate insulating film and sidewall spacers over the sidewalls of the gate electrode associated with each of the first through third field effect transistors. The sidewall spacers of at least the first field effect transistor have a different width than that of at least the second field effect transistor, the gate electrode of the third field effect transistor has a different length than that of at least the first field effect transistor for memory and the gate insulating film of the third field effect transistor has a thickness larger than that of the second field effect transistor.
REFERENCES:
patent: 5329482 (1994-07-01), Nakajima et al.
patent: 2004/0152262 (2004-08-01), Ichige et al.
patent: 5-102428 (1993-04-01), None
patent: 6-181293 (1994-06-01), None
patent: 7-176729 (1995-07-01), None
Aoyama Takashi
Owada Fukuo
Shinohara Masaaki
Watanabe Kozo
Antonelli, Terry Stout & Kraus, LLP.
Pham Long
Renesas Technology Corp.
LandOfFree
Semiconductor device and a method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and a method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and a method of manufacturing the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3978913