Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2004-12-24
2008-03-25
Chaudhari, Chandra (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S291000, C257SE21618, C257SE21629
Reexamination Certificate
active
07348243
ABSTRACT:
A transistor and a method for fabricating the same is disclosed, to uniformly provide impurity ions in impurity areas, and to prevent a short channel effect, in which the method for fabricating the transistor includes steps of forming a plurality of channel ion implantation areas having different depths in a first conductive type semiconductor substrate; forming a pillar by selectively etching the first conductive type semiconductor substrate; sequentially depositing a gate insulating layer and a conductive layer for a gate electrode on the first conductive type semiconductor substrate including the pillar; forming the gate electrode by selectively patterning the conductive layer; and forming second conductive type source/drain impurity ion areas in the first conductive type semiconductor substrate corresponding to the top of the pillar and both sidewalls of the pillar.
REFERENCES:
patent: 5177027 (1993-01-01), Lowrey et al.
patent: 5302843 (1994-04-01), Yamazaki
Chaudhari Chandra
Dongbu Electronics Co. Ltd.
Fortney Andrew D.
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