Transistor having a protruded drain

Details Transistor having a protruded drain Transistor having a protruded drain

2007-02-12

2008-09-02

Tran, Thien F (Department: 2811)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S301000

Reexamination Certificate

active

07419880

ABSTRACT:
A field effect transistor includes a gate that is formed in a channel region of an active region defined on a substrate. A source is formed at a first surface portion of the active region that is adjacently disposed at a first side face of the gate. A drain is formed at a second surface portion of the active region that is opposite to the first surface portion with respect to the gate. The drain has a protruded portion that is protruded from a surface portion of the substrate.

REFERENCES:
patent: 5798278 (1998-08-01), Chan et al.
patent: 6441431 (2002-08-01), Efland et al.
patent: 2000-40817 (2000-02-01), None
patent: 10-0251754 (2000-01-01), None

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