Dual source MOSFET for low inductance synchronous rectifier

Details Dual source MOSFET for low inductance synchronous rectifier Dual source MOSFET for low inductance synchronous rectifier

2005-01-14

2008-07-01

Doan, Theresa T. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S288000, C257SE21177, C257SE27099

Reexamination Certificate

active

07394135

ABSTRACT:
A dual source MOSFET comprises a large number of cells diffused into a substrate. The cells are divided into two regions with separate sources and gates but having a common drain connection, the substrate. It is preferred that the source regions be highly interdigitated so that the current at the silicon to metal interface is sufficiently diffuse so that the source from which it originated is indistinguishable, and in switching from one source to the other causes no significant difference in the current density or distribution at the drain connection, provided that the sum of the source currents is constant. The same construction provides a superior ac switch, though no drain connection is needed.

REFERENCES:
patent: 6803824 (2004-10-01), Rategh et al.

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