Semiconductor device having contact pads and method for...

Details Semiconductor device having contact pads and method for... Semiconductor device having contact pads and method for...

2003-12-30

2008-03-04

Lindsay, Jr., Walter (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S283000, C438S285000, C438S287000, C257SE21507, C257SE21589

Reexamination Certificate

active

07338867

ABSTRACT:
Semiconductor devices have gate structures on a semiconductor substrate with first spacers on sidewalls of the respective gate structures. First contact pads are positioned between the gate structures and have heights lower than the heights of the gate structures. Second spacers are disposed on sidewalls of the first spacers and on exposed sidewalls of the first contact pads. Second contact pads are disposed on the first contact pads.

REFERENCES:
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Korean Office Action, for Korean Application No. 10-2003-0009916.

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